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CHA2097A
20-40GHz Variable Gain Amplifier
GaAs Monolithic Microwave IC Description
Vd1 Vd23
The CHA2097A is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
In
Out
Vctrl
Vg1
Vg2
Vg3
Typical on wafer measurements
Main Features
Broadband performances : 20-40GHz 14dBm output power ( 1dB gain comp. ) 18dB 1.5dB gain 10dB gain control range. Low DC power consumption, 140mA @ 3.5V Chip size : 2.04 X 0.97 X 0.10 mm
25 20 15 10 5 0 -5 -10 -15 -20 -25 0 10 20 30
Gain & Rloss (dB)
S22 S11 40 50 60
frequency (GHz)
Main Characteristics
Tamb. = 25C Symbol
Fop G Gctrl P1dB Id Small signal gain Gain control range Output power at 1dB gain compression Bias current 13
Parameter
Operating frequency range
Min
20 16
Typ
18 10 14 140
Max
40
Unit
GHz dB dB dBm
200
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20978021
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2097A
Tamb = +25C, Vd1,2,3 = 3.5V Symbol
Fop G G Is P1dB P03 VSWRin
20-40GHz Variable Gain Amplifier
Electrical Characteristics for Broadband Operation
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Output power at 1dB gain compression (1) Output power at 3dB gain compression Input VSWR (1)
Min
20 16
Typ
Max
40
Unit
GHz dB dB dB dBm dBm
18 1.5 40
13 15
14 16 3.0:1 3.0:1 12
VSWRout Output VSWR (1) Gctrl Vdc Gain control dynamic DC voltage Vd Vg Vctrl
dB 4.0 0.4 0.4 200 V V V mA
3.5 -2.0 -2.0 140
Id
Bias current
(1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vd Id Vg Ta Tstg Drain bias voltage Drain bias current Gate bias voltage Operating temperature range Storage temperature range
Parameter
Values
4.0 200 -2.0 to +0.4 -40 to +85 -55 to +155
Unit
V mA V C C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA20978021
2/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Variable Gain Amplifier
Bias Conditions: F(GHz) 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 S11 dB -4,75 -5,92 -6,95 -8,07 -9 -9,96 -10,75 -11,26 -11,52 -12,03 -12,71 -14,68 -14,55 -17,06 -19,6 -21,82 -21,99 -23,66 -24,37 -24,22 -25,56 -24,43 -25,44 -25,52 -26,11 -26,98 -28,03 -29,59 -25,97 -19,91 -15,11 -11,72 -9,51 -8,19 -7,23 -6,98 -7 -6,99 -6,78 -6,66 -6,47 -6,32 -6,05 -5,89 -5,71 -5,58 -5,1 -5,23 -4,98 -5,18 Vd=3.5V, Vg=0V, Vctrl=-1V, Id=140mA S11 / -115,2 -124 -131 -137,6 -142,7 -147,7 -151,4 -154,7 -160,8 -170,5 -179,1 174,8 168,3 154,2 155,1 160,7 166 162,2 169 171,5 178,6 177,5 169,7 171,3 165,7 157,4 132,1 80 10,7 -36,7 -70 -101 -133,1 -167,2 160,6 127,9 95,8 64,6 34,2 7,2 -18,1 -40,8 -60,5 -77,5 -94,2 -107,5 -121,6 -132,4 -144,5 -155,1 S12 dB -67,47 -67,62 -66,42 -70,21 -71,68 -69,5 -71,34 -61,82 -58,85 -55,51 -54,34 -50,54 -68,27 -55,58 -55,02 -54,34 -52,57 -53,35 -55,75 -53,54 -56,09 -52,89 -51,25 -49,33 -50,85 -47,32 -47,19 -45,61 -45,29 -48,48 -47,05 -45,42 -46,37 -49,95 -49,34 -48,29 -43,43 -41,24 -38,37 -40,96 -46,95 -42,32 -40,63 -48,84 -61,19 -56,96 -55,14 -50,04 -54,03 -55,65 S12 / -177,7 150,7 148,4 118,4 102,8 -77,6 -153,6 -169,2 171,5 126,7 111,5 51,9 -0,3 74,8 34,8 25,3 4,1 -36,2 -48,6 -47,9 -85,8 -80,7 -117,3 -147,8 -165,7 174,7 145,5 115 68,8 57,1 65,8 28,8 -3,4 -13,7 -29,7 -64,6 -46,4 -68,1 -97,4 -138,5 -70,4 -101,2 -176,6 171,4 111,7 103,7 166,4 30,3 -125,9 179,7 S21 dB 3,66 6,93 9,91 12,47 14,8 16,79 18,03 18,79 19 19,51 19,91 19,56 19,32 19,23 19,68 19,69 19,71 19,75 19,57 19,23 19,19 19,09 19,02 18,95 18,79 18,71 18,71 18,5 18,31 18,2 17,69 16,63 15,5 13,76 11,68 9,12 6,31 3,32 0,15 -3,25 -6,78 -11,11 -14,83 -19,24 -21,88 -24,47 -24,78 -25,65 -28,47 -30,93 S21 / -94,8 -125,4 -157,6 170,1 136,8 101,8 66,8 31,6 0,7 -29,1 -57,6 -93,1 -113,6 -134 -161,4 172,4 147,7 121,7 96 71,9 48,2 24,1 -0,4 -25,9 -50,8 -76,2 -102,2 -130,4 -158 172,1 139,1 105,7 71,9 37,9 4,6 -26,4 -56 -83,9 -111,7 -137,9 -160,6 -178,6 163,5 157,2 148,7 133,5 114,8 89,9 60,3 30,8
CHA2097A
Typical Scattering Parameters (On wafer Sij measurements):
S22 dB -3,4 -3,95 -4,6 -5,43 -6,68 -8,99 -12,02 -17,57 -23,88 -20,12 -16,3 -10,26 -11,59 -15,39 -15,8 -14,44 -12,93 -12,25 -11,11 -10,96 -10,95 -11,22 -11,25 -10,52 -10,42 -10,4 -10,59 -10,34 -10,39 -10,1 -9,2 -8,86 -8,56 -8,16 -7,96 -7,6 -7,27 -7,08 -6,78 -6,27 -5,98 -5,72 -5,3 -5,1 -4,8 -4,35 -4,18 -3,86 -3,47 -3,21 S22 / -177,9 167,5 152,2 135,1 115,1 90,3 64,8 28,2 -12 -71,4 -97,4 -139,8 -176,9 170,8 -174,6 -170,8 -176,7 174,8 169,8 156,3 149,1 142 137 130 120,3 112,1 102,2 93 81,8 75,9 62,2 48,1 35,7 19,1 2,8 -10,6 -24,1 -38,4 -50,8 -62,1 -75,1 -83,4 -93,5 -102,7 -110,9 -120,8 -130,4 -135,8 -145,5 -153,3
Ref. : DSCHA20978021
3/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2097A
Bias Conditions: F(GHz) 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 S11 dB -21,22 -21,29 -21,49 -21,84 -22,04 -22,52 -23,04 -23,85 -24,42 -24,63 -25,23 -26,25 -27,04 -27,88 -29,52 -31,05 -33,21 -36,65 -37,81 -38,63 -36,35 -34,9 -33,79 -30,34 -29,02 -28,15 -26,75 -25,56 -24,23 -23,27 -22,17 -21,72 -21,71 -20,6 -19,32 -18,65 -18,06 -17,26 -16,91 -16,53 -13,58 -12,71 -11,82 -11,71 -11,55 -11,82 -12,85 -12,91 -13,13 -13,73
20-40GHz Variable Gain Amplifier
Typical Scattering Parameters (On wafer Sij measurements):
Vd=3.5V, Vg=0V, Vctrl=-0.3V, Id=140mA S11 / -127,3 -137,1 -145,7 -154 -162,3 -169,6 -176,4 176,4 170,9 166 161,6 153,4 152,8 146,8 142,3 139 137,1 139,9 150,3 -179,8 -146,1 -140,8 -133,8 -140,1 -137 -137,3 -145 -146,6 -152,1 -157,7 -160,7 -164,2 -172,8 -179,4 176,4 170,4 161,6 151,8 143,5 130,1 131,6 121,7 108,4 92 80 65,9 54 39,8 25,7 15,8 S12 dB -76,73 -78,25 -73,34 -77,33 -80,66 -81,88 -73,48 -63,82 -64 -58,81 -58,94 -56,1 -76,98 -61,65 -59,54 -57,85 -58,27 -58,68 -59,11 -57,44 -70,19 -56 -64,97 -61,29 -56,63 -63,3 -67,38 -63,38 -49,84 -63,61 -55,7 -58,1 -57,64 -56,99 -55,62 -55,06 -45,05 -41,22 -38,77 -45,12 -48,65 -40,48 -40,42 -51,47 -57,09 -63,78 -58,06 -52,98 -55,61 -64,85 S12 / 178,5 152,7 145,3 154,5 144,3 -119,4 178,9 -174,9 179,2 153 135,1 60,4 -105,4 138,4 99,5 87,5 78 57,7 58,8 39 57,9 15,6 -22,2 -13,6 -17,7 -100,1 177,5 84,1 63,6 -163,1 170,1 57,2 35,3 73,1 49,1 -6,1 -9,1 -30,4 -88,4 -127,4 -58,6 -80,3 -148,9 -147,8 -105,6 -147,1 -172 106 -166,3 115,9
4/8
S21 dB -11,95 -8,66 -5,6 -3 -0,57 1,48 2,82 3,65 3,85 4,28 4,54 4,29 3,55 3,75 4,18 4,17 4,12 4,14 3,85 3,45 3,32 3,14 3,07 2,85 2,53 2,31 2,04 1,53 0,94 0,43 -0,45 -1,94 -3,83 -6,65 -10,79 -17,23 -29,13 -21,01 -15,55 -13,23 -11,37 -10,55 -9,53 -9,08 -9,02 -9,01 -9,44 -10,94 -13,87 -18,07
S21 / -77,4 -105,2 -134,7 -164,1 165,1 132,5 99,7 66,3 36,8 8,4 -17,9 -50,3 -70,1 -88,5 -112,8 -136,4 -158,7 177,6 154,7 133,2 111,7 91,1 69,5 46,7 25 2,6 -20,2 -45,1 -68,2 -93,6 -121,1 -151,6 -179,8 150,8 124 103,1 124,9 -169,3 175,8 156,5 109,8 97,7 81,4 58,2 35 9,9 -21,2 -55,8 -89,7 -112,3
S22 dB -3,39 -3,93 -4,58 -5,41 -6,66 -8,92 -11,91 -17,29 -23,56 -20,1 -16,45 -10,67 -11,7 -15,43 -16,32 -14,56 -13,03 -12,27 -11,04 -10,84 -10,88 -11,32 -11,31 -10,47 -10,35 -10,38 -10,53 -10,35 -10,41 -10,26 -9,47 -9,14 -8,75 -8,31 -8,02 -7,64 -7,35 -7,14 -6,86 -6,31 -6,04 -5,78 -5,29 -5,17 -4,83 -4,42 -4,3 -3,89 -3,55 -3,24
S22 / -178 167,4 152 134,8 114,6 89,7 63,8 26,6 -16,2 -74,1 -99,5 -138,7 -175,2 170 -173,1 -168,2 -174,9 177 171,7 157,6 149,5 142,3 138,8 131,1 121,2 112,8 102,9 92,6 81,7 74,1 62 48,7 36,5 20,2 3,8 -9,7 -23,8 -37,5 -49,6 -61,6 -74,6 -83,3 -93,8 -102,5 -110,9 -120,7 -130,1 -136 -93,8 -102,5
Ref. : DSCHA20978021
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Variable Gain Amplifier
Typical On wafer measurements:
Tamb = +25C
CHA2097A
Gain and phase versus voltage control on CL pad :
CHA2097 Vd=3,5v Vg=0v Id=140mA
20 18 Gain at 20GHz 16 14 Gain at 30GHz
CHA2097 Vd=3,5v Vg=0v Id=140mA
310 290 270 250 230 210 190 170 150 130 110 90 70 50 30 10 -10 -30 -50 -70 -1 -0,9 -0,8 -0,7 -0,6 -0,5 -0,4 -0,3
Phi at 40GHz
S21 (dB)
12 10 8 6 4 2 0 -1 -0,9 -0,8 -0,7 -0,6 -0,5 -0,4 -0,3 -0,2 -0,1 0 Gain at 40GHz
Phi S21 ()
Phi at 30GHz
Phi at 20GHz
-0,2
-0,1
0
Vctrl (V)
Vctrl (V)
Sij parameter measurements versus frequency for 2 voltage control on CL pad:
CHA2097 Vd=3,5v Vg=0v Vctrl=-1V Id=140mA
22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 0 10 20 30 Frequency (GHz)
CHA2097 Vd=3,5v Vg=0v Vctrl=-0,3V Id=140mA
12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 0 10 20 30 Frequency (GHz)
Gain
Gain
Gain & Rloss (dB)
Gain & Rloss (dB)
S22
S22 S11
S11
40
50
60
40
50
60
Ref. : DSCHA20978021
5/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2097A
20-40GHz Variable Gain Amplifier
Chip Assembly and Mechanical Data
To Vd1,2,3 DC Drain supply feed 100pF
IN
OUT
100pF To Vctrl DC supply feed
100pF To Vgs1 DC Gate supply feed To Vgs2,3 DC Gate supply feed
Note : Supply feed should be capacitively bypassed.
Bonding pad positions.
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : DSCHA20978021
6/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Variable Gain Amplifier
Typical Bias Tuning
The circuit schematic is given below :
Vd1 Vd2,3
CHA2097A
IN
OU T
A ttenuator
Vg1 Vctrl Vg 2 Vg 3
For gain control operation, The three drain biases are connected altogether. In a same way, all the gate biases are connected together at the same power supply, tuned to drive a small signal operating current of 140mA. A separate access to the gate voltages of each stages ( Vg1,2,3 ) is provided for fine tuning of the stages regarding the application. An additional pad is provided ( Vctrl ) to control the gain of the circuit, driving two cold transistors in attenuator arrangement.
Ref. : DSCHA20978021
7/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2097A
20-40GHz Variable Gain Amplifier
Ordering Information
Chip form : CHA2097A99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA20978021
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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